Electronics & Semiconductor Manufacturing

ELECTS

Precision Fabrication · Advanced Integration

From sub-nanometer lithography to full-scale system integration — we manufacture the silicon intelligence behind tomorrow's technology.

NODE3nm FinFET WAFER300mm Silicon YIELD99.4% CLEAN ROOMISO Class 1 CAPACITY50K wafers/mo CERTIF.ISO 9001:2015 CERTIF.IATF 16949 NODE3nm FinFET WAFER300mm Silicon YIELD99.4% CLEAN ROOMISO Class 1 CAPACITY50K wafers/mo CERTIF.ISO 9001:2015 CERTIF.IATF 16949
28+
Years of Operation
3nm
Minimum Process Node
50K
Wafers Per Month
99.4%
Production Yield Rate

What We Do

End-to-End Semiconductor Manufacturing

Elects operates across the full semiconductor value chain — from raw silicon ingot to packaged IC. Our integrated fabs in Miyagi deliver unmatched precision at scale.

01
Wafer Fabrication

300mm wafer processing with sub-3nm lithography. EUV patterning, CMP, ALD, and ion implantation under ISO Class 1 clean room standards.

02
IC Design Support

Process design kit (PDK) delivery, DRC/LVS verification, and DFM analysis. Tailored to 5nm, 7nm, and 28nm CMOS process libraries.

03
Advanced Packaging

Flip-chip BGA, 2.5D/3D-IC interposer integration, wafer-level packaging (WLP), and fan-out packaging for high-bandwidth applications.

04
Test & Metrology

Automated wafer probe, electrical characterisation, SEM/TEM inspection, and final component burn-in and reliability screening at volume.

05
Power Semiconductors

SiC and GaN power device fabrication for EV drivetrains, renewable inverters, and industrial power conversion from 600V to 10kV rating.

06
RF & Photonics

III-V compound semiconductor (GaAs, InP) fab for RF/mmWave components, optical transceivers, and silicon photonics integration up to 400Gbps.

How We Build

From Crystal
to Silicon

Every chip that leaves Elects passes through a rigorously controlled fabrication sequence — optimised over 28 years of operational data.

01
Crystal Growth & Slicing

Czochralski-grown 300mm boules are precision-sliced, lapped, etched, and polished to Ra < 0.1nm surface finish.

02
Lithography & Patterning

EUV and DUV immersion scanners define sub-5nm features across multi-patterning process flows.

03
Deposition & Etch

ALD/CVD/PVD film stacks and atomic-layer etch (ALE) provide angstrom-level process control for gate, metal, and dielectric layers.

04
Doping & Anneal

Ion implantation at energies from 2keV to 5MeV, followed by millisecond laser anneal to activate dopants without diffusion.

05
Metrology & Inspection

Inline SEM, OCD scatterometry, and e-beam inspection ensure zero-defect progression between every layer.

06
Packaging & Final Test

Wafer-level back-end processing, dicing, and automated probe-sort — finished devices shipped to JEDEC-compliant trays.

300mm · EUV · 3nm NODE

Product Lines

Manufactured for Every Frontier

COMPUTE · AI
EX-7000 Series

High-performance compute accelerator fabric for AI inference and HPC workloads.

Process Node3nm FinFET
Transistors84 billion
TDP400W TDP
I/OUCIe 2.0 · PCIe 6.0
MOBILE · EDGE
EM-3 SoC

Ultra-low-power SoC for edge AI, IoT, and next-generation mobile platforms.

Process Node5nm TSMC-equiv.
CPU Cores8 × Cortex-A720
Power2.4W typical
MemoryLPDDR5X
NETWORK · CLOUD
NX-400 Switch ASIC

25.6 Tbps programmable Ethernet switch for hyperscale data center fabric.

Bandwidth25.6 Tb/s
Ports512 × 50GbE
Latency< 400ns
PackageFCBGA 60×60mm
AUTOMOTIVE · ADAS
AV-1 Vision Processor

AEC-Q100 Grade 2 rated vision processor for Level 3–5 autonomous driving perception pipelines.

Compute400 TOPS INT8
SafetyASIL-D
Temp. Range-40°C to +125°C
Process7nm

Get In Touch

Our Facility

Visit our headquarters and fab complex in Okayama, Miyagi Prefecture. Our engineering team is available for site tours, qualification discussions, and foundry partnerships.

Building No. 9177
Street Ebisu
Apt / Suite Apt 705
City Okayama
Prefecture Miyagi
Post Code 〒 42080
Phone +81-55-0616-5764

Send an Enquiry